 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MITSUBISHI SEMICONDUCTOR MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES * High output power Po=36.5 dBm(TYP.) @f=1.9GHz,Pin=23dBm * High power gain Gp=14.5 dB(TYP.) @f=1.9GHz * High power added efficiency add=50 %(TYP.) @f=1.9GHz,Pin=23dBm * Hermetic Package APPLICATION * For UHF Band power amplifiers QUALITY * GG Fig.1 * Ids=800 mA * Rg=100 RECOMMENDED BIAS CONDITIONS * Vds=10V Delivery -01:Tape & Reel(1K), -03:Trai(50pcs) (Ta=25C) Absolute maximum ratings Symbol VGSO VGDO ID IGR IGF PT Tch Tstg Parameter Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature Ratings -15 -15 3000 -10 21 18.7 175 -65 to +175 Unit V V mA mA mA W C C Electrical characteristics Symbol IDSS VGS(off) gm Po add GLP Rth(ch-c) (Ta=25C) Parameter Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Thermal Resistance *1 Test conditions Min. VDS=3V,VGS=0V VDS=3V,ID=10mA VDS=3V,ID=800mA VDS=10V,ID=800mA,f=1.9GHz Pin=23dBm VDS=10V,ID=800mA,f=1.9GHz Vf Method -1 35.0 13.0 - Limits Typ. 2400 -3 1000 36.5 50 14.5 5 Max. 3000 -5 8 Unit mA V mS dBm % dB C/W *1:Channel to case / Above parameters, ratings, limits are subject to change. Mitsubishi Electric Jan 2003 MGF0915A TYPICAL CHARACTERISTICS Po,Gp,PAE vs.Pin 40 35 30 Gp(dB),Po(dBm) 25 PAE VDS=10V ID=0.8A Po 80 70 60 50 40 Gp f=1.9GHz 20 15 10 5 0 5 10 15 20 25 30 Pin(dBm) 30 20 10 0 IM3,Po(SCL) vs. Pi(SCL) 40 30 20 VD=10V ID=800mA f1=1.90GHz f2=1.91GHz Po 10 0 -10 -20 -30 -40 -50 -60 -70 -5 0 5 10 15 20 25 Po(SCL) (dBm) 10 0 -10 -20 -30 -40 IM3 Pi(SCL) (dBm) Mitsubishi Electric Jan 2003 IM3 (dBc) PAE(%) MGF0915A S PARAMETERS (Ta=25C, VDS=10V, ID=800mA, Reference Plane see Fig.1) freq. (MHz) 600 1000 1400 1800 2200 2600 3000 3400 3800 4200 4600 5000 5400 5800 6200 6600 7000 7400 7800 8200 8600 9000 9400 9800 10200 10600 11000 11400 11800 12200 S11 (mag) 0.948 0.947 0.946 0.946 0.945 0.944 0.942 0.939 0.935 0.930 0.925 0.918 0.911 0.903 0.894 0.884 0.871 0.855 0.833 0.807 0.778 0.748 0.717 0.688 0.671 0.672 0.697 0.746 0.812 0.877 (ang) -145.92 -161.85 -168.94 -173.55 -176.72 -178.89 178.80 177.37 174.73 171.44 167.90 164.36 160.93 157.60 154.31 150.88 147.10 142.73 137.52 131.21 123.58 114.45 103.71 91.34 77.41 62.12 45.82 29.03 12.43 -3.09 (mag) 4.852 2.941 2.144 1.746 1.456 1.211 1.032 0.934 0.888 0.836 0.759 0.798 0.730 0.715 0.708 0.707 0.711 0.721 0.739 0.765 0.802 0.849 0.905 0.964 1.023 1.072 1.100 1.095 1.038 0.913 S21 (ang) 99.38 86.78 77.11 69.39 62.91 57.13 51.69 46.34 40.95 35.45 29.81 24.04 18.15 12.14 6.01 -0.28 -6.80 -13.66 -20.98 -28.93 -37.70 -47.48 -58.48 -70.88 -84.83 -100.40 -117.62 -136.37 -156.40 -177.29 (mag) 0.013 0.015 0.015 0.016 0.017 0.018 0.019 0.020 0.022 0.024 0.027 0.031 0.035 0.039 0.045 0.052 0.060 0.069 0.081 0.094 0.110 0.129 0.152 0.179 0.211 0.248 0.293 0.326 0.346 0.346 S12 (ang) 24.42 26.56 28.76 30.92 32.93 34.72 36.22 37.37 38.13 38.46 38.33 37.72 36.59 34.92 32.68 29.84 26.34 22.15 17.18 11.37 4.61 -3.21 -12.23 -22.60 -34.51 -48.17 -63.82 -81.74 -102.24 -125.67 (mag) 0.721 0.717 0.719 0.725 0.732 0.739 0.745 0.749 0.751 0.751 0.749 0.745 0.740 0.732 0.724 0.713 0.702 0.688 0.671 0.651 0.624 0.590 0.545 0.487 0.410 0.311 0.184 0.021 0.194 0.404 2.0 S22 (ang) -177.51 -178.09 -178.44 -178.66 -178.82 -178.94 -179.06 -179.19 -179.32 -179.44 -179.56 -179.67 -179.78 179.67 177.54 175.25 172.45 169.39 166.53 164.20 162.51 161.19 159.72 157.44 153.88 149.13 144.37 -179.00 -81.10 -95.22 K 0.38 0.63 0.84 0.94 1.03 1.14 1.27 1.34 1.34 1.38 1.43 1.27 1.33 1.32 1.26 1.20 1.15 1.12 1.09 1.08 1.04 1.00 0.96 0.93 0.90 0.86 0.81 0.79 0.79 0.79 MAG/MSG (dB) 25.72 22.92 21.55 20.38 18.23 16.00 14.25 13.19 12.59 11.75 10.58 10.96 9.76 9.23 8.90 8.65 8.38 8.06 7.75 7.43 7.36 8.18 7.75 7.31 6.86 6.36 5.75 5.26 4.77 4.21 Gate Mark Round corner (1) 0.80 0.8 Gate Mark (1) Reference Plane 4.20 1.20 (3) Reference Plane (2) 4.00 0.25 (2) 0.6 2.5 (1) Gate (2) Drain (3) Source 0.3 BACK SIDE PATTERN (Unit:mm) Fig.1 OUTLINE DRAWING Mitsubishi Electric Jan 2003 2.8 |
Price & Availability of MGF0915A03
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |